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Hafnium Oxide Sputtering Target

Hafnium Oxide Sputtering Target

AvailableHafnium Oxide Sputtering Target for SaleWholesale & RetailManufacturer & SupplierFactory Supply
  • Symbol: HfO2
  • Purity: 99.95% - 99.99%
  • Size: 0 - 48 inch
  • Thickness: ≥ 1 mm
  • Shape: Circular, rectangular, annular, rotary etc.
  • Ships to: Worldwide
  • Hafnium Oxide Sputtering Target List

    Product Name Shape Purity Size (inch) Thickness (mm)
    Hafnium Oxide Sputtering Target Circular 99.95% - 99.99% 0 - 48 ≥ 1
    Hafnium Oxide Sputtering Target Rectangular 99.95% - 99.99% 0 - 48 ≥ 1
    Hafnium Oxide Sputtering Target Annular 99.95% - 99.99% 0 - 48 ≥ 1
    Hafnium Oxide Sputtering Target Oval 99.95% - 99.99% 0 - 48 ≥ 1
    Hafnium Oxide Sputtering Target Cylindrical 99.95% - 99.99% 0 - 48 ≥ 1
    Hafnium Oxide Sputtering Target Planar 99.95% - 99.99% 0 - 48 ≥ 1
    Hafnium Oxide Sputtering Target Rotatable (rotary) 99.95% - 99.99% 0 - 48 ≥ 1
    Note: We provide customized service. If you don't find the sputtering targets you want, please send us an email directly. We can customize it according to your requirements.

    Hafnium dioxide is a white solid hafnium oxide. The density of hafnium dioxide is 9.68g/cm3. The melting point is 2780-2920k. The boiling point is 5400 K. The coefficient of thermal expansion is 5.8 × 10-6 / ℃. It is insoluble in water, hydrochloric acid and nitric acid, but soluble in concentrated sulfuric acid and hydrofluoric acid. Hafnium dioxide is a raw material for the production of hafnium and hafnium alloy. It can be used as refractory, anti radioactive coating and catalyst.

    Hafnium oxide sputtering target is a kind of high purity hafnium oxide raw material by sputtering deposition. According to the different shapes, hafnium oxide sputtering targets can be divided into circular, rectangular, square, annular, oval, cylindrical, planar, rotatable (rotary) hafnium oxide targets. It has the characteristics of wide band gap and high dielectric constant, which can be used in microelectronics. It is the most likely to replace the silicon-based integrated circuit's core device, the gate insulating layer of metal oxide semiconductor field-effect transistor (MOSFET), so as to solve the size limit problem of the development of traditional SiO2 / Si structure in MOSFET.

    Hafnium Oxide Sputtering Target Application

    Hafnium oxide sputtering target has the characteristics of wide band gap and high dielectric constant, it can be used in microelectronics. The details are as follows:
    - Semiconductor;
    - Chemical vapor deposition (CVD) display;
    - Physical vapor deposition (PVD) display;
    - Optical applications.
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